Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces

Autor: Ramachandran, V, Lee, C.D, Feenstra, R.M, Smith, A.R *, Northrup, J.E, Greve, D.W
Zdroj: In Journal of Crystal Growth 2000 209(2):355-363
Databáze: ScienceDirect