Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

Autor: Salinger, Andrew G. *, Shadid, John N., A. Hutchinson, Scott, Hennigan, Gary L., Devine, Karen D., Moffat, Harry K.
Zdroj: In Journal of Crystal Growth 1999 203(4):516-533
Databáze: ScienceDirect