Novel InGaAs contact layer growth for hetero-junction bipolar transistors (HBTs) by using the multiple group-V source molecular beam epitaxy (MBE) system
| Autor: | Kadoiwa, Kaoru *, Izumi, Shigekazu, Yamamoto, Yoshitsugu, Hayafuji, Norio, Sonoda, Takuji |
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| Zdroj: | In Journal of Crystal Growth 1999 203(1):18-24 |
| Databáze: | ScienceDirect |
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