Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
| Autor: | Peng, C.S. *, Chen, H., Zhao, Z.Y., Li, J.H., Dai, D.Y., Huang, Q., Zhou, J.M., Zhang, Y.H., Tung, C.H., Sheng, T.T., Wang, J. |
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| Zdroj: | In Journal of Crystal Growth 1999 201:530-533 |
| Databáze: | ScienceDirect |
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