Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach
| Autor: | Korb, J a, Flade, T b, Jurisch, M b, *, Köhler, A b, Reinhold, Th b, Weinert, B b |
|---|---|
| Zdroj: | In Journal of Crystal Growth 1999 198 Part 1:343-348 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect