Incorporation of Mg in GaN grown by molecular beam epitaxy

Autor: Orton, J.W. a, *, Foxon, C.T. b, Cheng, T.S. b, Hooper, S.E. b, Novikov, S.V. c, Ber, B.Ya. c, Kudriavtsev, Yu.A. c
Zdroj: In Journal of Crystal Growth 1999 197(1):7-11
Databáze: ScienceDirect