Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy
Autor: | Singh, Dushyant, V V, Tharundev, Maity, Subha, Gayakwad, Dhammapriy, Jörg Osten, H., Lodha, Saurabh, Khiangte, Krista R |
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Zdroj: | In Journal of Crystal Growth 1 January 2025 649 |
Databáze: | ScienceDirect |
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