Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Autor: Singh, Dushyant, V V, Tharundev, Maity, Subha, Gayakwad, Dhammapriy, Jörg Osten, H., Lodha, Saurabh, Khiangte, Krista R
Zdroj: In Journal of Crystal Growth 1 January 2025 649
Databáze: ScienceDirect