Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals

Autor:	Hu, Shanshan, Liu, Yafei, Cheng, Qianyu, Chen, Zeyu, Tong, Xiao, Raghothamachar, Balaji, Dudley, Michael
Zdroj:	In Journal of Crystal Growth 15 February 2024 628
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect