Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals
| Autor: | Yamashita, T., Suo, H., Eto, K., Miyasaka, A., Kato, T., Okumura, H. |
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| Zdroj: | In Journal of Crystal Growth 1 December 2023 623 |
| Databáze: | ScienceDirect |
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