Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy

Autor: Bengoechea-Encabo, Ana, Albert, Steven, Niehle, Michael, Trampert, Achim, Calleja, Enrique
Zdroj: In Journal of Crystal Growth 15 December 2023 624
Databáze: ScienceDirect