Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy
| Autor: | Gayakwad, Dhammapriy, Singh, Dushyant, Kumar, Rahul, Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory J., Mahapatra, S., Khiangte, Krista R. |
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| Zdroj: | In Journal of Crystal Growth 15 September 2023 618 |
| Databáze: | ScienceDirect |
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