Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current
| Autor: | Du, Jiyao, Pu, Taofei, Li, Xiaobo, Li, Liuan, Ao, Jin-Ping, Gao, Hongwei |
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| Zdroj: | In Journal of Crystal Growth 1 June 2023 611 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect