Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE
| Autor: | Pan, Rui, Yuan, Ziyuan, Zhang, Kedong, Yao, Jinshan, Li, Chen, Lu, Minghui, Lu, Hong, Chen, Yan-Feng |
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| Zdroj: | In Journal of Crystal Growth 15 June 2022 588 |
| Databáze: | ScienceDirect |
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