Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors
| Autor: | Karadavut, OmerFaruk, Chaudhuri, Sandeep K., Kleppinger, Joshua W., Nag, Ritwik, Mandal, Krishna C. |
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| Zdroj: | In Journal of Crystal Growth 15 April 2022 584 |
| Databáze: | ScienceDirect |
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