Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn
| Autor: | Shengurov, V.G., Chalkov, V.Yu., Denisov, S.A., Trushin, V.N., Zaitsev, A.V., Nezhdanov, A.V., Pavlov, D.A., Filatov, D.O. |
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| Zdroj: | In Journal of Crystal Growth 15 January 2022 578 |
| Databáze: | ScienceDirect |
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