Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors
| Autor: | Ben Saddik, K., Braña, A.F., López, N., García, B.J., Fernández-Garrido, S. |
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| Zdroj: | In Journal of Crystal Growth 1 October 2021 571 |
| Databáze: | ScienceDirect |
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