Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes
| Autor: | Ji, Shiyang, Kosugi, Ryoji, Kojima, Kazutoshi, Adachi, Kohei, Kawada, Yasuyuki, Mochizuki, Kazuhiro, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime |
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| Zdroj: | In Journal of Crystal Growth 15 September 2020 546 |
| Databáze: | ScienceDirect |
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