Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas
| Autor: | Yamamoto, Reo, Takekawa, Nao, Goto, Ken, Nagashima, Toru, Dalmau, Rafael, Schlesser, Raoul, Murakami, Hisashi, Collazo, Ramón, Monemar, Bo, Sitar, Zlatko, Kumagai, Yoshinao |
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| Zdroj: | In Journal of Crystal Growth 1 September 2020 545 |
| Databáze: | ScienceDirect |
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