Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
| Autor: | Leone, Stefano, Fornari, Roberto, Bosi, Matteo, Montedoro, Vincenzo, Kirste, Lutz, Doering, Philipp, Benkhelifa, Fouad, Prescher, Mario, Manz, Christian, Polyakov, Vladimir, Ambacher, Oliver |
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| Zdroj: | In Journal of Crystal Growth 15 March 2020 534 |
| Databáze: | ScienceDirect |
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