Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

Autor: Arzig, Matthias, Salamon, Michael, Hsiao, Ta Ching, Uhlmann, Norman, Wellmann, Peter J.
Zdroj: In Journal of Crystal Growth 15 February 2020 532
Databáze: ScienceDirect