3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth
Autor: | Han, Xue-Feng, Liu, Xin, Nakano, Satoshi, Harada, Hirofumi, Miyamura, Yoshiji, Kakimoto, Koichi |
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Zdroj: | In Journal of Crystal Growth 15 February 2020 532 |
Databáze: | ScienceDirect |
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