3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

Autor: Han, Xue-Feng, Liu, Xin, Nakano, Satoshi, Harada, Hirofumi, Miyamura, Yoshiji, Kakimoto, Koichi
Zdroj: In Journal of Crystal Growth 15 February 2020 532
Databáze: ScienceDirect