Effect of temperature on conversion of basal plane dislocations to treading edge dislocations during 4H-SiC homoepitaxiy

Autor:	Yang, L., Zhao, L.X., Wu, H.W.
Zdroj:	In Journal of Crystal Growth 1 February 2020 531
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect