High quality 4H-SiC homo-epitaxial wafer using the optimal C/Si ratio
| Autor: | Zhao, L.X., Yang, L., Wu, H.W. |
|---|---|
| Zdroj: | In Journal of Crystal Growth 15 January 2020 530 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Zhao, L.X., Yang, L., Wu, H.W. |
|---|---|
| Zdroj: | In Journal of Crystal Growth 15 January 2020 530 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect