Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method

Autor: Wang, L., Horiuchi, T., Sekimoto, A., Okano, Y., Ujihara, T., Dost, S.
Zdroj: In Journal of Crystal Growth 15 August 2019 520:72-81
Databáze: ScienceDirect