Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method
Autor: | Wang, L., Horiuchi, T., Sekimoto, A., Okano, Y., Ujihara, T., Dost, S. |
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Zdroj: | In Journal of Crystal Growth 15 August 2019 520:72-81 |
Databáze: | ScienceDirect |
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