Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs
| Autor: | Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Piner, Edwin L. |
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| Zdroj: | In Journal of Crystal Growth 1 July 2019 517:28-34 |
| Databáze: | ScienceDirect |
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