Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys

Autor: Ohkawa, Kazuhiro, Ichinohe, Fumitaka, Watanabe, Tomomasa, Nakamura, Kenichi, Iida, Daisuke
Zdroj: In Journal of Crystal Growth 15 April 2019 512:69-73
Databáze: ScienceDirect