InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET
| Autor: | Cerba, T., Hauchecorne, P., Martin, M., Moeyaert, J., Alcotte, R., Salem, B., Eustache, E., Bezard, P., Chevalier, X., Lombard, G., Bassani, F., David, S., Beainy, G., Tournié, E., Patriarche, G., Boutry, H., Bawedin, M., Baron, T. |
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| Zdroj: | In Journal of Crystal Growth 15 March 2019 510:18-22 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect