Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Autor: Liu, Zhibin, Nitta, Shugo, Usami, Shigeyoshi, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Zdroj: In Journal of Crystal Growth 1 March 2019 509:50-53
Databáze: ScienceDirect