Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy
| Autor: | Machida, Ryuto, Akahane, Kouichi, Watanabe, Issei, Hara, Shinsuke, Fujikawa, Sachie, Kasamatsu, Akifumi, Fujishiro, Hiroki I. |
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| Zdroj: | In Journal of Crystal Growth 1 February 2019 507:357-361 |
| Databáze: | ScienceDirect |
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