Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

Autor: Miyoshi, Makoto, Yamanaka, Mizuki, Egawa, Takashi, Takeuchi, Tetsuya
Zdroj: In Journal of Crystal Growth 15 January 2019 506:40-44
Databáze: ScienceDirect