Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
| Autor: | Anderson, T.J., Gallagher, J.C., Luna, L.E., Koehler, A.D., Jacobs, A.G., Xie, J., Beam, E., Hobart, K.D., Feigelson, B.N. |
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| Zdroj: | In Journal of Crystal Growth 1 October 2018 499:35-39 |
| Databáze: | ScienceDirect |
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