Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Autor: Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R., Jr.
Zdroj: In Journal of Crystal Growth 15 September 2018 498:352-356
Databáze: ScienceDirect