Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Autor: | Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R., Jr. |
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Zdroj: | In Journal of Crystal Growth 15 September 2018 498:352-356 |
Databáze: | ScienceDirect |
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