Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
| Autor: | El Kazzi, S., Alian, A., Hsu, B., Verhulst, A.S., Walke, A., Favia, P., Douhard, B., Lu, W., del Alamo, J.A., Collaert, N., Merckling, C. |
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| Zdroj: | In Journal of Crystal Growth 15 February 2018 484:86-91 |
| Databáze: | ScienceDirect |
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