Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

Autor: Foronda, Humberto M., Wu, Feng, Zollner, Christian, Alif, Muhammad Esmed, Saifaddin, Burhan, Almogbel, Abdullah, Iza, Michael, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.
Zdroj: In Journal of Crystal Growth 1 February 2018 483:134-139
Databáze: ScienceDirect