Spatial distribution of structural defects in Cz-seeded directionally solidified silicon ingots: An etch pit study

Autor: Lantreibecq, A., Legros, M., Plassat, N., Monchoux, J.P., Pihan, E.
Zdroj: In Journal of Crystal Growth 1 February 2018 483:183-189
Databáze: ScienceDirect