Formation of basal plane stacking faults on the ([formula omitted]) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
| Autor: | Ohtomo, Kohei, Matsumoto, Nana, Ashida, Koji, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo |
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| Zdroj: | In Journal of Crystal Growth 15 November 2017 478:174-179 |
| Databáze: | ScienceDirect |
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