Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study

Autor: Hong, M., Wan, H.W., Chang, P., Lin, T.D., Chang, Y.H., Lee, W.C., Pi, T.W., Kwo, J.
Zdroj: In Journal of Crystal Growth 1 November 2017 477:159-163
Databáze: ScienceDirect
Externí odkaz: