Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy

Autor: Hestroffer, Karine, Lund, Cory, Koksaldi, Onur, Li, Haoran, Schmidt, Gordon, Trippel, Max, Veit, Peter, Bertram, Frank, Lu, Ning, Wang, Qingxiao, Christen, Jürgen, Kim, Moon J., Mishra, Umesh K., Keller, Stacia
Zdroj: In Journal of Crystal Growth 1 May 2017 465:55-59
Databáze: ScienceDirect
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