Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
| Autor: | Margetis, J., Mosleh, A., Al-Kabi, S., Ghetmiri, S.A., Du, W., Dou, W., Benamara, M., Li, B., Mortazavi, M., Naseem, H.A., Yu, S.-Q., Tolle, J. |
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| Zdroj: | In Journal of Crystal Growth 1 April 2017 463:128-133 |
| Databáze: | ScienceDirect |
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