Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals
| Autor: | Suo, H., Eto, K., Ise, T., Tokuda, Y., Osawa, H., Tsuchida, H., Kato, T., Okumura, H. |
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| Zdroj: | In Journal of Crystal Growth 15 June 2017 468:879-882 |
| Databáze: | ScienceDirect |
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