Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses
| Autor: | Wang, C.K., Wang, Y.W., Chiou, Y.Z., Chang, S.H., Jheng, J.S., Chang, S.P., Chang, S.J. |
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| Zdroj: | In Journal of Crystal Growth 15 June 2017 468:585-589 |
| Databáze: | ScienceDirect |
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