Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
| Autor: | Barry, Ousmane I, Tanaka, Atsushi, Nagamatsu, Kentaro, Bae, Si-Young, Lekhal, Kaddour, Matsushita, Junya, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi |
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| Zdroj: | In Journal of Crystal Growth 15 June 2017 468:552-556 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect