Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

Autor: Lee, Ho-Jun, Bae, Si-Young, Lekhal, Kaddour, Tamura, Akira, Suzuki, Takafumi, Kushimoto, Maki, Honda, Yoshio, Amano, Hiroshi
Zdroj: In Journal of Crystal Growth 15 June 2017 468:547-551
Databáze: ScienceDirect