Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon
| Autor: | Kissinger, G., Dabrowski, J., Sinno, T., Yang, Y., Kot, D., Sattler, A. |
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| Zdroj: | In Journal of Crystal Growth 15 June 2017 468:424-432 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect