TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern
| Autor: | Mynbaeva, M.G., Kremleva, A.V., Kirilenko, D.A., Sitnikova, A.A., Pechnikov, A.I., Mynbaev, K.D., Nikolaev, V.I., Bougrov, V.E., Lipsanen, H., Romanov, A.E. |
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| Zdroj: | In Journal of Crystal Growth 1 July 2016 445:30-36 |
| Databáze: | ScienceDirect |
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