Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition
| Autor: | Hazbun, Ramsey, Hart, John, Hickey, Ryan, Ghosh, Ayana, Fernando, Nalin, Zollner, Stefan, Adam, Thomas N, Kolodzey, James |
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| Zdroj: | In Journal of Crystal Growth 15 June 2016 444:21-27 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect