Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Autor: Wośko, Mateusz, Paszkiewicz, Bogdan, Szymański, Tomasz, Paszkiewicz, Regina
Zdroj: In Journal of Crystal Growth 15 March 2015 414:248-253
Databáze: ScienceDirect