Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

Autor: Chiu, C.H., Lin, Y.W., Tsai, M.T., Lin, B.C., Li, Z.Y., Tu, P.M., Huang, S.C., Hsu, Earl, Uen, W.Y., Lee, W.I., Kuo, H.C.
Zdroj: In Journal of Crystal Growth 15 March 2015 414:258-262
Databáze: ScienceDirect