Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer
Autor: | Chiu, C.H., Lin, Y.W., Tsai, M.T., Lin, B.C., Li, Z.Y., Tu, P.M., Huang, S.C., Hsu, Earl, Uen, W.Y., Lee, W.I., Kuo, H.C. |
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Zdroj: | In Journal of Crystal Growth 15 March 2015 414:258-262 |
Databáze: | ScienceDirect |
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