Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method
| Autor: | Kivambe, Maulid, Powell, Douglas M., Castellanos, Sergio, Ann Jensen, Mallory, Morishige, Ashley E., Nakajima, Kazuo, Morishita, Kohei, Murai, Ryota, Buonassisi, Tonio |
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| Zdroj: | In Journal of Crystal Growth 1 December 2014 407:31-36 |
| Databáze: | ScienceDirect |
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