Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

Autor: Sasaki, Kohei, Higashiwaki, Masataka, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu
Zdroj: In Journal of Crystal Growth 15 April 2014 392:30-33
Databáze: ScienceDirect