Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
Autor: | Sasaki, Kohei, Higashiwaki, Masataka, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu |
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Zdroj: | In Journal of Crystal Growth 15 April 2014 392:30-33 |
Databáze: | ScienceDirect |
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